Microsemi 2N6989
MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
| Part No. | 2N6989 |
|---|---|
| Datasheet | 2N6989 Download |
| Manufacturer |  Microsemi |
| Description | MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(1) Ratings Collector-Emitter Voltage (3) Collector-Base Voltage (3) Emitter-Base Voltage (3) Collector Current (3) Total Power Dissipation @ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2) Symbol VCEO VCBO VEBO IC PD Value 50 75 6.0 800 1.5 1.0 0.4 Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA = +250C for 2N6990 Ratings apply to total package. 3) Ratings apply to each transistor in the array. Units Vdc Vdc Vdc mAdc W 0CELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current V(BR)CEO VCB = 60 Vdc ICBO VCB = 75 Vdc; Ic= 10 µAdc Emitter-Base Cutoff Current VEB = 4.0Vdc IEBO VEB = 6.0Vdc; Ic= 10 µAdc TO- 116* 2N6989 20 PIN LEADLESS* 2N6989U 14 PIN FLAT PACK* 2N6990 *See appendix A for package outline Min.