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2N6990 - MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR

This page provides the datasheet information for the 2N6990, a member of the 2N6989 MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR family.

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Datasheet Details

Part number 2N6990
Manufacturer Microsemi
File Size 56.20 KB
Description MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR
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TECHNICAL DATA MULTIPLE (QUAD) NPN SILICON DUAL IN-LINE AND FLATPACK SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/559 Devices 2N6989 2N6989U 2N6990 Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS (1) Ratings Collector-Emitter Voltage (3) Collector-Base Voltage (3) Emitter-Base Voltage (3) Collector Current (3) Total Power Dissipation @ TA = +250C 2N6989(2) 2N6989U(2) 2N6990(2) Symbol VCEO VCBO VEBO IC PD Value 50 75 6.0 800 1.5 1.0 0.4 Operating & Storage Junction Temperature Range Top, Tstg -65 to +200 1) Maximum voltage between transistors shall be ≥ 500 Vdc 2) Derate linearly 8.57 mW/0C above TA = +250C for 2N6989 and 2N6989U Derate linearly 2.286 mW/0C above TA = +250C for 2N6990 Ratings apply to total package.
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