Microsemi 2N7368
NPN HIGH POWER SILICON TRANSISTOR
| Part No. | 2N7368 |
|---|---|
| Datasheet | 2N7368 Download |
| Manufacturer |  Microsemi |
| Description | NPN HIGH POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol Value Units Vdc Vdc Vdc Adc Adc W 0 C Unit 0 C/W Collector-Emitter Voltage 80 VCEO Collector-Base Voltage 80 VCBO Emitter-Base Voltage 7.0 VEBO Base Current IB 4.0 Collector Current 10 IC DataSheet4U.com Total Power Dissipation @ TC = 250C (1) 115 PT Operating & Storage Junction Temperature Range -65 to +200 TJ, Tstg DataShee THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 Max. 1.5 TO-254* 1) Derate linearly 0.657 W/ C for TC > 25 C *See appendix A for package outline 0ELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 0.2 Adc Collector-Emitter Cutoff Current VCE = 70 Vdc Collector-Emitter Cutoff Current VCE = 80 Vdc, VBE = 1.5 Vdc Emitter-Base Cutoff Current VEB = 7.0 Vdc VCEO(sus) ICES ICEX IEBO 80 1.0 1.0 1.0 Vdc mAdc mAdc mAdc 6 Lake Street, Lawrence, MA 01841 DataSheet4U.com 1-800-446-1158 / (978) 7...