3135GN-280LV Datasheet | Microsemi

DESCRIPTION The 3135GN-280LV is an internally matched, MON SOURCE, class AB, Ga N on Si C HEMT transistor capable of providing over 13 d B gain, 280 Watts of pulsed RF output power at 200  S pulse width, 20% duty factor across the 3100 to 3500 MHz band. This hermetically sealed transistor is utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness. Market Application - High Power S-Band Pulsed Radar ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 616 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) 125 V -8 to +0 V Maximum Temperatures Storage Temperature (TSTG) -55 to +125 C Operating Junction Temperature +250 C CASE OUTLINE 55-KP mon Source ELECTRICAL CHARACTERISTICS @ 25C Symbol Characteristics Test Conditions1 Min Typ Max Units Pout Output Power Pin=14.1W, Freq=3100,3300,3500 MHz 280 330 Gp Power Gain Pin=14.1W, Freq=3100,3300,3500 MHz 13 13.7 d...