Microsemi 99016
Military Silicon Power Rectifier
MAXIMUM RATINGS
550 550 ± 30 ± 40 60 240 60 75 4.0 20 735 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W °C °C °C °C PLUS 247TM (IXFX) D (TAB) G D TO-264 AA (IXFK) G D S 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-264 PLUS-247 TO-264 300 D (TAB) D = Drain TAB = Drain 0.9/6 Nm/lb.in. 6 10 g g G = Gate S = SourceFEATURES
z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.0 4.5 ± 200 TJ = 25°C TJ = 125°C 50 2 V V nA µA mA z z VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V z z Double metal process for low gate resistance International standard packages Epoxy meet UL 94 V-0, flammability classification Avalanche energy and current rated Fast intrinsic Rectifier Advantages z z z VGS = 10 V, ID = 0.5● ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 88 m Ω Easy to mount Space savings High power density © 2002 IXYS All rights reserved DS98984(12/02) IXFK 60N55Q2 IXFX 60N55Q2 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max.