Microsemi APL502L
LINEAR MOSFET
MAXIMUM RATINGS
All Ratings: TC = 25°C unless otherwise specified. Symbol Parameter APL502B2_L (G) UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 500 58 232 ±30 ±40 730 5.84 Volts Amps Volts Watts W/°C TJ,TSTG TL IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 -55 to 150 300 58 50 3000 °C Amps mJ STATICELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number MIN TYP MAX UNIT BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 (VGS = 12V, 29A) Zero Gate Voltage Drain Curren...