Microsemi APT100GT120JR
Thunderbolt IGBT
| Part No. | APT100GT120JR |
|---|---|
| Datasheet | APT100GT120JR Download |
| Manufacturer |  Microsemi |
| Description | Thunderbolt IGBT |
| Buy | Stock & Price |
FEATURES
● Low Forward Voltage Drop● Low Tail Current
● Integrated Gate Resistor Low EMI, High Reliability
● RoHS Compliant
● RBSOA and SCSOA Rated
● High Frequency Switching to 50KHz
● Ultra Low Leakage Current S ISOTOP ® OT 22 7 "UL Recognized" file # E145592 Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol Parameter VCES VGE IC1 IC2 ICM SSOA PD TJ, TSTG TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified. Ratings 1200 ±20 123 67 200 200A @ 1200V 570 -55 to 150 300 Watts °C Amps Unit Volts Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
