Datasheet4U Logo Datasheet4U.com

APT150GN60B2G - IGBT

Download the APT150GN60B2G datasheet PDF. This datasheet also covers the APT150GN60B2 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (APT150GN60B2_Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.