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APT30M60J - N-Channel MOSFET

Key Features

  • Fast switching with low EMI/RFI.
  • Low RDS(on).
  • Ultra low Crss for improved noise immunity.
  • Low gate charge.
  • Avalanche energy rated.
  • RoHS compliant.

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Full PDF Text Transcription for APT30M60J (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APT30M60J. For precise diagrams, and layout, please refer to the original PDF.

APT30M60J 600V, 31A, 0.15Ω Max N-Channel MOSFET G S D SOT-227 S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe...

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oltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.

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