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APT30N60BC6 APT30N60SC6
600V 30A .125Ω
COOLMOS
Power Semiconductors
• Ultra Low RDS(ON) • Low Miller Capacitance
• Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated
Super Junction MOSFET
TO-247
D3PAK
D
G S
MAXIMUM RATINGS Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise specified.
APT30N60B_SC6
UNIT
VDSS
ID
IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Total Power Dissipation @ TC = 25°C Gate-Source Voltage Continuous Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
APT30N60SC6 Datasheet
