Full PDF Text Transcription for APT31N80JC3 (Reference)
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APT31N80JC3. For precise diagrams, and layout, please refer to the original PDF.
APT31N80JC3 800V 31A 0.145Ω Super Junction MOSFET C O OLMOS Power Semiconductors S G D S SO 2 T- 27 • Ultra low RDS(ON) • Ultra Low Gate Charge, Qg • Popular SOT-227 Pack...
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• Ultra low RDS(ON) • Ultra Low Gate Charge, Qg • Popular SOT-227 Package • Low Miller Capacitance "UL Recognized" • Avalanche Energy Rated • N-Channel Enhancement Mode ISOTOP ® D G S www.DataSheet4U.com Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/ dt All Ratings: TC = 25°C unless otherwise specified. APT31N80JC3 UNIT Volts Amps Parameter Drain-Source Voltage Continuous Drain Current @ TC =
APT31N80JC3 Datasheet
