APT38N60BC6
APT38N60BC6 APT38N60SC6
600V 38A 0.099Ω
COOLMOS
Power Semiconductors
Super Junction MOSFET
- Ultra Low RDS(ON)
- Low Miller Capacitance
- Ultra Low Gate Charge, Qg
- Avalanche Energy Rated
- Extreme dv/dt Rated
- Popular TO-247 or Surface Mount D3 package.
TO-247
D3PAK
MAXIMUM RATINGS
All Ratings per die: TC = 25°C unless otherwise specified.
Symbol Parameter
APT38N60B_SC6
UNIT
VDSS
IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous
Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 38A, TJ = 125°C) Avalanche Current 2 Repetitive Avalanche Energy 2 ( Id = 6.6A, Vdd = 50V ) Single Pulse Avalanche Energy ( Id = 6.6A, Vdd = 50V )
600 38 24 112 ±20 278 -55 to 150 260 15 6.6 1.2 796
Volts
Amps
Volts...
