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APT47N60SC3 Datasheet PDF

Microsemi APT47N60SC3

MOSFET

Part No. APT47N60SC3
Datasheet APT47N60SC3 Download
Manufacturer
Microsemi
Description MOSFET
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APT47N60SC3 datasheet page 1 preview

MAXIMUM RATINGS

Symbol Parameter All Ratings: TC = 25°C unless otherwise specified. APT47N60BC3_SC3(G) UNIT VDSS ID IDM VGS VGSM PD Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor 600 47 141 ±20 ±30 417 3.33 Volts Amps Volts Watts W/°C TJ,TSTG TL dv/dt IAR EAR EAS Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 47A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 -55 to 150 260 50 20 1 1800 °C V/ns Amps mJ STATIC

ELECTRICAL CHARACTERISTICS

Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BVDSS RDS(on) IDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 30A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Vo...
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