Microsemi APT50GN60BDQ2G
Resonant Mode Combi IGBT
| Part No. | APT50GN60BDQ2G |
|---|---|
| Datasheet | APT50GN60BDQ2G Download |
| Manufacturer |  Microsemi |
| Description | Resonant Mode Combi IGBT |
| Buy | Stock & Price |
APPLICATIONS
: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSMAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 All Ratings: TC = 25°C unless otherwise specified. APT50GN60BD_SDQ2(G) UNIT Volts 600 ±30 @ TC = 25°C 107 64 150 150A @ 600V 366 -55 to 175 °C Watts Amps Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 175°C Switching Safe Operating Area @ TJ = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 STATICELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 800µA, Tj = 25°C) MIN TYP MAX Units 600 5.0 1.05 5.8 1.45 1.7 50 2 6.5 1.85 Volts Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C) Colle...
