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APT50GN60S - Resonant Mode Combi IGBT

Download the APT50GN60S datasheet PDF. This datasheet also covers the APT50GN60B variant, as both devices belong to the same resonant mode combi igbt family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (APT50GN60B_Microsemi.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TYPICAL PERFORMANCE CURVES APT50GN60B APT50GN60B_S(G) APT50GN60S APT50GN60B(G) APT50GN60S(G) www.DataSheet4U.com 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.