Full PDF Text Transcription for APT51M50J (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APT51M50J. For precise diagrams, and layout, please refer to the original PDF.
APT51M50J 500V, 51A, 0.075Ω Max N-Channel MOSFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields ...
View more extracted text
l switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. S G D S SO 2 T- 27 ISOTOP ® "UL Recognized" file # E145592 APT51M50J G D Single die MOSFET
More Datasheets from Microsemi (now Microchip Technology)