APT53N60BC6 datasheet by Microsemi (now Microchip Technology).
| Part number | APT53N60BC6 |
|---|---|
| Datasheet | APT53N60BC6-Microsemi.pdf |
| File Size | 145.27 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | Super Junction MOSFET |
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TO-247 D3PAK D G S MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specified. Symbol Parameter APT53N60B_SC6 UNIT VDSS ID IDM VGS PD TJ,TSTG TL IAR EAR EAS Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead...
View APT53N60BC6 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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APT53N60BC6 | N-Channel MOSFET | INCHANGE |
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| APT53N60SC6 | Super Junction MOSFET |
| APT5024BFLL | Power MOSFET |
| APT5024SFLL | Power MOSFET |
| APT50DF170HJ | Fast Diode Full Bridge Power Module |
| APT50DL120HJ | Fast Diode Full Bridge Power Module |
| APT50DL60HJ | Fast Diode Full Bridge Power Module |
| APT50GN60B | Resonant Mode Combi IGBT |
| APT50GN60BDQ2 | Resonant Mode Combi IGBT |
| APT50GN60BDQ2G | Resonant Mode Combi IGBT |
| APT50GN60BG | Resonant Mode Combi IGBT |
