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COOLMOS
Power Semiconductors
• Ultra Low RDS(ON) • Low Miller Capacitance
• Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated
APT97N65B2C6 APT97N65LC6
650V 97A 0.041Ω
Super Junction MOSFET
APT97N65B2C6
T-Max®
TO-264
APT97N65LC6
D
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
G S
MAXIMUM RATINGS Symbol Parameter
All Ratings per die: TC = 25°C unless otherwise specified.
APT97N65B2_LC6
UNIT
VDSS
ID
IDM VGS PD TJ,TSTG TL IAR EAR
Drain-Source Voltage Continuous Drain Current @ TC = 25°C 1 (assuming Rdson max = 0.