APTC60SKM24CT1G Datasheet | Microsemi

Features - - - - - Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged CR2 Si C Schottky Diode Zero reverse recovery Zero forward recovery Temperature Independent switching behavior Positive temperature coefficient on VF Very low stray inductance Internal thermistor for temperature monitoring High level of integration Pins 1/2 ; 3/4 ; 5/6 must be shorted together Benefits - Outstanding performance at high frequency operation - Direct mounting to heatsink (isolated package) - Low junction to case thermal resistance - Solderable terminals both for power and signal for easy PCB mounting - Low profile - Ro HS pliant Absolute maximum ratings Symbol VDSS ID Parameter Drain - Source Breakdown Voltage Continuous Drain Current Tc = 25°C Tc = 80°C Max ratings 600 95 70 260 ±20 24 462 15 3 1900 Unit V A V mΩ W A m J August, 2009 1- 7 APTC60SKM24CT1G - Rev 0 IDM Pulsed Drain current VGS Gate - Source Voltage RDSon Drain - Source ON Resistance PD Maximum Power Dissipation .. IAR Avalanche current (repetitive and non repetitive) EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy Tc = 25°C These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on .microsemi. .microsemi. All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 0V,VDS = 600V Min Tj = 25°C Tj = 125°C 2.1 Typ VGS = 10V, ID = 47.5A VGS = VDS, ID = 5m A VGS = ±20 V, VDS = 0V Max 350 600 24 3.9 200 Unit µA mΩ V n A Dynamic Characteristics Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Total gate Charge...