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APTGT75DA120TG Datasheet PDF

Microsemi APTGT75DA120TG

Power-Module IGBT

Part No. APTGT75DA120TG
Datasheet APTGT75DA120TG Download
Manufacturer
Microsemi
Description Power-Module IGBT
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APTGT75DA120TG datasheet page 1 preview

FEATURES

● Fast Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
● Kelvin emitter for easy drive
● Very low stray inductance - Symmetrical design - Lead frames for power connections
● High level of integration
● Internal thermistor for temperature monitoring Benefits
● Stable temperature behavior
● Very rugged
● Solderable terminals for easy PCB mounting
● Direct mounting to heatsink (isolated package)
● Low junction to case thermal resistance
● Easy paralleling due to positive TC of VCEsat
● Low profile
● RoHS Compliant CR1 OUT Q2 G2 E2 0/VBU S NT C1 G2 E2 OUT VBUS 0/VBUS OUT VBUS SENSE E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C V W These Devices are sensitive to Electrostatic Discharge.
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