The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
APTM100A13DG
Phase leg with Series diodes MOSFET Power Module
VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C
VBUS
G1 S1 OUT
G2 0/VBUS S2
G1 VBUS S1
S2 G2
0/VBUS
OUT
Application • Zero Current Switching resonant mode
Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration
Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant
APTM100A13DG – Rev 2 December, 2006
Absolute maximum ratings
Symbol
Para
APTM100A13DG Datasheet
