Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged.
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
G1 VBUS S1
0/VBUS
OUT.
Kelvin source for easy drive.
Very low stray inductance
- Symmetrical design - M5 power connectors.
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APTM100A13SCG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C
VBUS
Q1 G1
OUT S1
Q2 G2
0/ VB US S2
Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies
Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged
• Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
G1 VBUS S1
0/VBUS
OUT
• Kelvin source for easy drive • Very low stray inductance
- Symmetrical design - M5 power connectors
• High level of integration
S2 Benefits G2 • Outstanding performance at high frequency operation
• Dir
APTM100A13SCG Datasheet
