Power MOS 7® FREDFETs G4 - Low RDSon
- Low input and Miller capacitance - Low gate charge S4 - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged.
Kelvin source for easy drive.
Very low stray inductance - Symmetrical design - M5 power connectors.
High level of integration
G2
S2 Benefits
S4.
Outstanding performance at high frequency operation G4.
Full PDF Text Transcription for APTM100H18FG (Reference)
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APTM100H18FG. For precise diagrams, and layout, please refer to the original PDF.
APTM100H18FG OUT1 OUT2 APTM100H18FG– Rev 1 July, 2006 Full - Bridge MOSFET Power Module VDSS = 1000V RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Q1 G1 S1 Q2 G2 S2 ...
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RDSon = 180mΩ typ @ Tj = 25°C ID = 43A @ Tc = 25°C Q1 G1 S1 Q2 G2 S2 G1 VBUS S1 S3 G3 VB US Q3 Q4 0/VBUS O UT 1 0/VBUS O UT 2 Application • Welding converters • Switched Mode Power Supplies G3 • Uninterruptible Power Supplies • Motor control S3 Features • Power MOS 7® FREDFETs G4 - Low RDSon - Low input and Miller capacitance - Low gate charge S4 - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration G2 S2 Benefits S4 • Outstanding performance at high frequency operation G4 • Dir
APTM100H18FG Datasheet
