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APTM100UM45DAG - Single switch

Key Features

  • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance G - Low gate charge DK - Avalanche energy rated - Very rugged.
  • Kelvin source for easy drive.
  • Very low stray inductance - Symmetrical design - M5 power connectors.
  • High level of integration.
  • AlN substrate for improved thermal performance Benefits.
  • Outstanding performance at high frequency operation.
  • Direct mounting to heatsink (isolated package).
  • Low junction to case thermal.

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Full PDF Text Transcription for APTM100UM45DAG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for APTM100UM45DAG. For precise diagrams, and layout, please refer to the original PDF.

APTM100UM45DAG Single switch with Series diode MOSFET Power Module VDSS = 1000V RDSon = 45mΩ typ @ Tj = 25°C ID = 215A @ Tc = 25°C SK Application S D  Zero Current Switc...

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j = 25°C ID = 215A @ Tc = 25°C SK Application S D  Zero Current Switching resonant mode Features  Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance G - Low gate charge DK - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance - Symmetrical design - M5 power connectors  High level of integration  AlN substrate for improved thermal performance Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Low profile  RoHS Compliant Absolute maximum ratings Symbol Para

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