Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged.
SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF.
Kelvin source for easy drive.
Kelvin drain for voltage monitoring.
Very low stray inductance
- Symmetrical design - M5 power connectors - M3 power connectors.
Full PDF Text Transcription for APTM100UM65SCAVG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
APTM100UM65SCAVG. For precise diagrams, and layout, please refer to the original PDF.
APTM100UM65SCAVG Single switch Series & SiC parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C D DK G SK S G, SK and DK t...
View more extracted text
65mΩ typ @ Tj = 25°C ID = 145A @ Tc = 25°C D DK G SK S G, SK and DK terminals are for control signals only (not for power) DK S D SK G Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • SiC Parallel Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF • Kelvin source for easy drive • Kelvin drain for voltage monitoring • Very low s
APTM100UM65SCAVG Datasheet
