Microsemi BFR90
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | BFR90 |
|---|---|
| Datasheet | BFR90 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
●●
● High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA Low Noise Figure – NF = 2.4 dB (typ) @ f = 0.5 GHz High Power Gain – Gmax = 18dB (typ) @ f = 0.5 GHz Macro T (STYLE #2)
DESCRIPTION
: Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in applications requiring fast switching times.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 15 20 3.0 30 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 60ºC Derate above 60ºC 180 2.0 mWatts mW/ ºC MSC1307.PDF 10-25-99 BFR90ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCEO BVCB0 BVEBO ICBO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = 10 Vdc, VBE = 0 Vdc) 15 20 3.0 Value Typ.
