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GC4312 - High Speed NIP Diodes

This page provides the datasheet information for the GC4312, a member of the GC4310 High Speed NIP Diodes family.

Datasheet Summary

Description

The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material.

These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.

Features

  • Available as packaged devices or as chips for hybrid.

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Datasheet preview – GC4312

Datasheet Details

Part number GC4312
Manufacturer Microsemi
File Size 182.88 KB
Description High Speed NIP Diodes
Datasheet download datasheet GC4312 Datasheet
Additional preview pages of the GC4312 datasheet.

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Full PDF Text Transcription

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www.MICROSEMI.com ® TM DESCRIPTION The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 mA bias. These diodes have somewhat faster speeds as compared with similar PIN diodes. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500.
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