GC4373
DESCRIPTION
The GC4300 series are high speed (anode base) NIP diodes made with high resistivity reverse epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems.
The NIP diode is used when negative bias current is available for forward conduction and will operate with as little as -10 m A bias. These diodes have somewhat faster speeds as pared with similar PIN diodes.
These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500.
This series of diodes meets Ro HS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements.
APPLICATIONS
The GC4300 series can be used in RF circuits as an on/off element, as a switch, or...
