GC4491 Datasheet | Microsemi

DESCRIPTION The GC4400 series are high voltage, high power (cathode base) PIN diodes. These high resistivity silicon devices are glass passivated for high stability and reliability and have been proven by thousands of device hours in high reliability systems. Each device can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55°C to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The GC4400 series will operate typically with +50 m A forward bias. Breakdown voltages are available up to 750 volts. Consult the factory for higher voltage devices. KEY FEATURES - Available as packaged devices or as chips for hybrid applications - High power handling - Suitable for application to 18Ghz - Low Loss - Low Distortion - Ro HS pliant1 APPLICATIONS The GC4400 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR or lobing switches, channel or antenna selection switches (telemunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4400 series can be used in RF circuits as an on/off at moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. 1 Products are supplied with a Gold finish and are suitable for Ro HS plaint assembly. Consult factory for details. APPLICATIONS/BENEFITS - TR Switches - Antenna Selector Switches - Duplexers - Digital Phase Shifters ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Leakage Current @80% Minimum Rated VB Leakage Current @80% Minimum Rated VB Operating Temperature Storage Temperature GC441X GC443X GC449X Symbol IR IR TOP TSTG Value 0.5 1.0 -55 to +150 -65 to +200 Unit u A u A ºC ºC IMPORTANT: For the most current data, consult MICROSEMI’s...