GC4530 Datasheet | Microsemi

DESCRIPTION The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage temperatures from -65°C to +200°C and will operate over the range from -55° to +150°C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The NIP diode is used when negative bias current is available for forward conduction and will operate typically with -50 m A bias. Breakdown voltages are available up to 500 volts. (Higher voltages available on request. Consult factory for details.) These diodes have somewhat faster speeds as pared with similar PIN diodes. This series of diodes meets Ro HS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS 2B The GC4500 series can be used in RF circuits as an on/off element, as a switch or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include medium high power switches (ECM systems), TR or lobing switches, channel or antenna selection switches (telemunications), duplexers (radar) and digital phase shifters (phase arrays). The GC4500 series are also used as active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) 3B Rating Symbol Value Unit Maximum Leakage Current @80% of Minimum Rated VB 0.5 u A Storage Temperature TSTG -65 to +200 ºC Operating Temperature -55 to +150 ºC For the most current data, consult our website: .MICROSEMI. Specifications are subject to change, consult factory for...