GC4921-112 Overview
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base...
GC4921-112 Key Features
- Dual Series PIN Diodes
- Wide Bandwidth / High Switching
- Up to 3 dB Isolation improvement
- 5 Gram Typical Pull Strength
- Very Low RS/CJ (Loss/Isolation)
- High Quality, High Resistivity Epitaxy
- Stable Low Leakage Passivation
- RoHS pliant 1
- High Speed Switching
- Broadband Performance