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GC4921-112 - DUAL SERIES BEAMLEAD DIODE

Description

Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics.

Features

  • Dual Series PIN Diodes.
  • Wide Bandwidth / High Switching Speed.
  • Up to 3 dB Isolation improvement over conventional designs.
  • 5 Gram Typical Pull Strength.
  • Very Low RS/CJ (Loss/Isolation).
  • High Quality, High Resistivity Epitaxy.
  • Stable Low Leakage Passivation with Rugged Glass Body.
  • RoHS Compliant 1 1- These devices are supplied with gold terminations. Consult factory for details.

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GC4921-112 & GC4922-112 CONTROL DEVICES – ® DUAL SERIES BEAMLEAD DIODE RoHS Compliant GENERAL DESCRIPTION Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra-fast switching characteristics. The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra-high speed switching characteristics. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified.
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