Microsemi GC4944
The structural details include thermal oxide junction passivation thus providing reliable operation with stable junction parameters along with ceramic glass, which provides mechanical strength to the diode. These devices are designed with a narrow base width, a high quality intrinsic ‘I’ layer that provides low loss, high isolation and ultra high speed switching characteristics.| Part No. | GC4944 |
|---|---|
| Datasheet | GC4944 Download |
| Manufacturer |  Microsemi |
| Description | BEAMLEAD PIN DIODES |
| Buy | Stock & Price |
FEATURES
● Wide Bandwidth / High Switching SpeedDESCRIPTION
Semiconductor mesa beam lead PIN diodes are designed for very low inductance, low resistance and moderately low capacitance with ultra fast switching characteristics. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements.● 5 Gram Typical Pull Strength
● Very Low RS/CJ (Loss/Isolation) Products with Low Inductance
● High Quality, High Resistivity Epitaxy
● Stable Low Leakage Passivation with Rugged Glass Body
● RoHS Compliant 1 1
APPLICATIONS
These high speed beam lead PIN diodes are designed for stripline and microstrip circuits and are primarily used in shunt/series and conventional series multithrow configurations as switching, attenuating and phase shifting elements with frequencies extending up to Ku band. These devices are supplied with Gold plated terminations. Consult factory for details.