Microsemi GC9986
The beamlead design eliminates the problems associated with wire bonding very small junction devices thus improving reliability and performance in MIC applications. By optimizing epitaxy and metallization, these devices achieve lowest Rs-Cj products resulting in exceptional conversion loss performance.| Part No. | GC9986 |
|---|---|
| Datasheet | GC9986 Download |
| Manufacturer |  Microsemi |
| Description | Schottky Barrier Diodes |
| Buy | Stock & Price |
DESCRIPTION
Microsemi’s Schottky Barrier devices are currently available in the eight junction ring quad configuration. Devices are available in monolithic form for hybrid applications as well as in hermetic or non-hermetic packages. Monolithic devices are recommended for highest frequency, broadband designs. Our in house epitaxy process capability insures repeatability for lowest conversion loss through Ku Band. A broad range of unique metallization schemes produce Microsemi’s complete line of barrier heights. Diodes are available with barrier heights ranging from 600 mV to 1300 mV per leg. “High Rel” screening is available on packaged devices per your requirements. This series of devices meets RoHS requirements per EU Directive 2002/95/EC. KEYFEATURES
● Monolithic Design for Lowest Parasitics and Matched Junction Characteristics● Low Noise Figure
● Suitable for
APPLICATIONS
to 26.5 GHz● Excellent Conversion Loss
● Available High and Ultra-High Barrier Heights
● Can be Supplied as Monolithic Devices for Hybrid
APPLICATIONS
or as Packaged Devices● RoHS Compliant1 These devices are supplied with Gold plated terminations.
