Microsemi JAN2N1711
NPN LOW POWER SILICON TRANSISTOR
JAN2N1711 Specifications
- Package : TO-5
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 500mA
- Collector Base Voltage : 75V
- Collector Emitter Voltage : 30V
- Emitter Base Voltage : 7V
- Max Power Dissipation : 800mW
- Max Operating Temp : 125°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | JAN2N1711 |
|---|---|
| Datasheet | JAN2N1711 Download |
| Manufacturer |  Microsemi |
| Description | NPN LOW POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCBO VEBO IC PT TJ, Tstg Symbol ZθJX 2N1711 75 2N1890 100 Unit Vdc Vdc mAdc W W 0 C Unit C/W @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Junction Temperature Range 7.0 500 0.8 3.0 -65 to +200 Max. 58 THERMAL CHARACTERISTICS Characteristics Thermal Impedance 1) Derate linearly 4.57 mW/0C for TA > 250C 2) Derate linearly 17.2 mW/0C for TC > 250C 0 TO-5* *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Base Breakdown Voltage IC = 100 µAdc Collector-Emitter Breakdown Voltage RBE = 10 Ω, IC = 100 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Emitter-Base Breakdown Voltage IE = 100 µAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N1711, S 2N1890, S 2N1711, S 2N1890, S 2N1711, S 2N1890, S V(...
