Microsemi JAN2N2060
UNITIZED DUAL NPN SILICON TRANSISTOR
JAN2N2060 Specifications
- Package : TO-78
- Mount Type : Through Hole
- Polarity : NPN
- Max Collector Current : 500mA
- Collector Base Voltage : 100V
- Collector Emitter Voltage : 60V
- Emitter Base Voltage : 7V
- Max Power Dissipation : 600mW
- Max Operating Temp : 125°C
- Min Operating Temp : -65°C
Source:
Octopart
| Part No. | JAN2N2060 |
|---|---|
| Datasheet | JAN2N2060 Download |
| Manufacturer |  Microsemi |
| Description | UNITIZED DUAL NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Symbol 2N2060 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current VCEO VCBO VEBO IC 60 100 7.0 500 One Both Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Section Sections PT 540 600 1.5 2.12 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections mW W 0CELECTRICAL CHARACTERISTICS
(TA = +250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 Ω, IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current V(BR)CER V(BR)CEO VCB = 100 Vdc ICBO