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JAN2N2060 - UNITIZED DUAL NPN SILICON TRANSISTOR

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TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current VCEO VCBO VEBO IC 60 100 7.0 500 One Both Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Section Sections PT 540 600 1.5 2.12 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.