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JAN2N2608 Datasheet PDF

Microsemi JAN2N2608

P-CHANNEL J-FET

Part No. JAN2N2608
Datasheet JAN2N2608 Download
Manufacturer
Microsemi
Description P-CHANNEL J-FET
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JAN2N2608 datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA = +250C unless otherwise noted) Parameters / Test Conditions Symbol Value Gate-Source Voltage Power Dissipation (1) TA = +250C Operating Junction & Storage Temperature Range (1) Derate linearly 1.71 mW/0C for TA > +250C. VGSS PD Top, Tstg 30 300 -65 to +200 Units V mW 0 C TO-18 (TO-206AA) *See appendix A for package outline

ELECTRICAL CHARACTERISTICS

(TA = +250C unless otherwise noted) PARAMETERS / TEST CONDITIONS Gate-Source Breakdown Voltage VDS = 0, IG = 1.0 µAdc Gate Reverse Current VDS = 0, VGS = 30 Vdc VDS = 0, VGS = 15 Vdc Drain Current VGS = 0, VDS = 5.0 Vdc Gate-Source Cutoff Voltage VDS = 5.0 V, ID = 1.0 µAdc Magnitude of Small-Signal, Common-Source Short-Circuit Forward Transfer Admittance VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz Small-Signal, Common-Source Short-Circuit Input Capacitance VGS = 0, VDS = 5.0 Vdc, f = 1.0 MHz Common-Source Spot Noise Figure VGS = 0, VDS = 5.0 Vdc, f = 1.0 kHz BW = 16%, RG = 1.0 megohms, egen = 1.82 mVdc, RL = 470 Ω Symbol V(BR)GSS IGSS Min.