Microsemi JAN2N5686
NPN POWER SILICON TRANSISTOR
| Part No. | JAN2N5686 |
|---|---|
| Datasheet | JAN2N5686 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER SILICON TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IB IC PT TJ, Tstg 2N5685 2N5686 Units 60 60 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W @ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Junction Temperature Range 5.0 15 50 300 171 -55 to +200 Max. .0584 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC 0 TO-3* (TO-204AA) 1) Derate linearly 1.715 W/0C between TC = 250C and TC = 2000C *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 40 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc 2N5685 2N5686 2N5685 2N5686 2N5685 2N5...