Microsemi JAN2N930
NPN Transistor
| Part No. | JAN2N930 |
|---|---|
| Datasheet | JAN2N930 Download |
| Manufacturer |  Microsemi |
| Description | NPN Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC PT TJ, Tstg Symbol RθJC Value 45 60 6.0 30 300 600 -55 to +200 Max. 97 Units Vdc Vdc Vdc mAdc mW 0 @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Junction Temperature Range C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 2.0 mW/0C above TA = +250C 2) Derate linearly 4.0 mW/0C above TC = +250C 0 TO- 18* (TO-206AA) Unit C/W *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TC = +250C unless otherwise noted) Characteristics Symbol V(BR)CEO ICBO Min. Max. Unit Vdc 10 10 10 5.0 2.0 2.0 µAdc ηAdc µAdc ηAdc ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 45 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Curre...