Microsemi JANS2N3636L
PNP SILICON AMPLIFIER TRANSISTOR
| Part No. | JANS2N3636L |
|---|---|
| Datasheet | JANS2N3636L Download |
| Manufacturer |  Microsemi |
| Description | PNP SILICON AMPLIFIER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Symbol VCEO VCBO VEBO IC 2N3634* 2N3635* 140 140 2N3636* 2N3637* 175 175 Unit TO-39* (TO-205AD) 2N3634, 2N3635 2N3636, 2N3637 Vdc Vdc 5.0 Vdc 1.0 Adc @ TA = +250C(1) 1.0 W PT @ TC = +250C(2) 5.0 W 0 Operating & Storage Junction Temperature Range -65 to +200 C TJ, Tstg *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly 5.71 mW/0C for TA > +250C 2) Derate linearly 28.6 mW/0C for TC > +250C TO-5* 2N3634, 2N3635 2N3636, 2N3637 *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2...