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KV2001 - VARACTOR DIODES

General Description

These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor.

Key Features

  • Available as packaged devices or as chips for hybrid.

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Other Datasheets by Microsemi (now Microchip Technology)

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KV2101 VARACTOR DIODES
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www.MICROSEMI.com ® TM DESCRIPTION These families of hyperabrupt junction RF varactor diodes feature computer controlled grown junction epitaxy which provides extraordinary consistency and the highest Q available in a 22 Volt hyperabrupt varactor. These series give the designer a full capacitance range of 10 to 500 pF at 3 or 4 volts of bias, depending on product series. They allow octave tuning of LC tanks through 500 MHz. With a reduced 1.5 to 1 frequency ratio, straight-line-frequency tuning over a 3 to 8 volt tuning range is possible. Ultrahigh Q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias.