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LX3051 - InGaAs PIN PHOTODIODE

Description

Microsemi’s InGaAs Coplanar PIN Photodiode chips are ideal for high bandwidth 1310 and 1550 nm single-mode-fiber optical networking applications.

The device family offers superior responsivity performance and high bandwidth with large active area in single die and 1x4 array die.

Features

  • LX3051 single die, 3 Gbs, 80µm active area.
  • LX3050 single die, 10 Gbs, 32µm active area.
  • LX3052 1x4 array die, 10 Gbs, 32µm active area.
  • Coplanar Waveguide, 50 ohm characteristic impedance.
  • High Responsivity.
  • Low Dark Current.
  • High Bandwidth.
  • Anode/Cathode on illuminated Side.
  • 125µm Pad pitch.
  • Die good for bond wire or flip chip.

📥 Download Datasheet

Datasheet preview – LX3051

Datasheet Details

Part number LX3051
Manufacturer Microsemi
File Size 184.70 KB
Description InGaAs PIN PHOTODIODE
Datasheet download datasheet LX3051 Datasheet
Additional preview pages of the LX3051 datasheet.

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Full PDF Text Transcription

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LX3051 3 Gbs LX3050 10 Gbs LX3052 10Gbs 1x4 ARRAY InGaAs PIN PHOTODIODE New Product Information and Sales Kit Manufactured by: Microsemi Integrated Products Garden Grove, CA Telephone: 714-898-8121 More than solutions – enabling possibilities WWW.Microsemi .COM LX3050/1/2 InGaAs PIN PHOTODIODES INTRODUCTION CONFIDENTIAL INFORMATION This new product introduction guide is intended for use only by Microsemi’s sales people and authorized representatives and distributors. This material can be adapted for customer presentations, but the sales strategy and summary [pricing, availability, etc.
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