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MBR20150CT - Schottky Barrier Rectifiers

Download the MBR20150CT datasheet PDF. This datasheet also covers the MBR2040CT variant, as both devices belong to the same schottky barrier rectifiers family and are provided as variant models within a single manufacturer datasheet.

General Description

Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications.

The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.

Key Features

  • Plastic package with UL 94V-0 flammability classification.
  • Flame retardant epoxy molding component.
  • Guardring for overvoltage protection.
  • Low power loss, high efficiency.
  • RoHS compliant (2002/95/EC) 2 1 23 1 2 3 TO-220AB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR2040CT-Microsemi.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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MBR20150CT 20 Amp High Voltage 150Volts Barrier Rectifier Power Schottky Micro Commercial Components
MBR20150CT 20A High Power Schottky Barrier Rectifiers CITC
MBR20150CT SCHOTTKY RECTIFIER SENSITRON SEMICONDUCTOR

Other Datasheets by Microsemi (now Microchip Technology)

Part Number Description
MBR20100CT Schottky Barrier Rectifiers
MBR20200CT Schottky Barrier Rectifiers
MBR2040CT Schottky Barrier Rectifiers
MBR2045CT Schottky Barrier Rectifiers
MBR2050CT Schottky Barrier Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MBR2040CT to MBR20200CT Schottky Barrier Rectifiers Main product characteristics IF(AV) VRRM Tj(MAX) 20A (2 x 10A) 40V to 200V 175ºC RoHS COMPLIANT Features and benefits • Plastic package with UL 94V-0 flammability classification • Flame retardant epoxy molding component • Guardring for overvoltage protection • Low power loss, high efficiency • RoHS compliant (2002/95/EC) 2 1 23 1 2 3 TO-220AB Description and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.