MBR20150CT Overview
and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency. 1/3 June 2010 Rev B MBR2040CT to MBR20200CT Schottky Barrier Rectifiers Fig.1 Forward current derating curve.
MBR20150CT Key Features
- Plastic package with UL 94V-0 flammability classification
- Flame retardant epoxy molding ponent
- Guardring for overvoltage protection
- Low power loss, high efficiency
- RoHS pliant (2002/95/EC)
