Microsemi MBR30150FCT
The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency.| Part No. | MBR30150FCT |
|---|---|
| Datasheet | MBR30150FCT Download |
| Manufacturer |  Microsemi |
| Description | Isolated Schottky Barrier Rectifiers |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Plastic package with UL 94V-0 flammability classification● Flame retardant epoxy molding component
● Guardring for overvoltage protection
● Low power loss, high efficiency
● RoHS compliant (2002/95/EC) 12 3 1 3 ITO-220AB 2
DESCRIPTION
and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Electrical characteristics(1) MBR3040FCT MBR3045FCT MBR3050FCT MBR3060FCT MBR3080FCT MBR3090FCT MBR30100FCT MBR30150FCT MBR30200FCT Symbol Parameter Unit VRRM Max Peak Repetitive Reverse Voltage 40 45 VR(RMS) Max RMS Reverse Voltage 28 31.5 VR Max DC Blocking Voltage 40 45
