MBR3060CT Datasheet | Microsemi

Features and benefits - Plastic package with UL 94V-0 flammability classification - Flame retardant epoxy molding ponent - Guardring for overvoltage protection - Low power loss, high efficiency - Ro HS pliant (2002/95/EC) 12 3 TO-220AB Description and applications Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction leading to low power loss and high efficiency. Electrical characteristics(1) MBR3040CT MBR3045CT MBR3050CT MBR3060CT MBR3080CT MBR3090CT MBR30100CT MBR30150CT MBR30200CT Symbol Parameter Unit VRRM Max Peak Repetitive Reverse Voltage 40 45 VR(RMS) Max RMS Reverse Voltage 28 31.5 Max DC Blocking Voltage 40 45 IF(AV) IFSM VF Max average forward current (see fig.1) Non repetitive peak forward surge current (8.3ms single half sine wave) Max forward voltage @ 15A (per leg) IR(2) Maximum instantaneous TJ = 25ºC reverse current at rated VR TJ = 125ºC TSTG, TJ Storage and Junction temperature -55 to +150 (1) All ratings at 25ºC unless specified otherwise (2) Measured with a test pulse of 380µs to minimize self-heating effect 50 60 35 42 50 60 80 90 56 63 80 90 30...