Microsemi MDS150
The MDS150 is a high power COMMON BASE bipolar transistor. It is designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The transistor includes double input prematch and output prematch for broadband performance.| Part No. | MDS150 |
|---|---|
| Datasheet | MDS150 Download |
| Manufacturer |  Microsemi |
| Description | Pulsed Avionics 1030 - 1090 MHz |
| Buy | Stock & Price |
GENERAL DESCRIPTION
The device has gold thin-film metallization and diffused ballasting in a hermetically sealed package for proven highest MTTF. CASE OUTLINE 55AW Style 1ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation Device Dissipation @25C1 350 W Maximum Voltage and Current Collector to Emitter Voltage (BVces) 55 V Emitter to Base Voltage (BVebo) 3.5 V Peak Collector Current (Ic) 10 A Maximum Temperatures Storage Temperature -65 to +150 C Operating Junction Temperature +200 CELECTRICAL CHARACTERISTICS
@ 25C SYMBOL Pout Pin Pg c VSWR Pd1 Trise1 CHARACTERISTICS Power Out Power Input Power Gain Collector Efficiency Load Mismatch Tolerance Pulse Droop Rise Time TEST CONDITIONS F = 1030, 1090 MHz Vcc = 50 Volts PW = Note 2 DF = Note 2 MIN 150 20 8.75 40 3:1 0.5 100 TYP MAX UNITS W W dB % dB nSec FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces BVcbo hFE●jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Base Breakdown DC – Current Gain Thermal Resistance Ie...
