MG1010 Overview
Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5.9 95 GHz.
MG1010 Key Features
- CW Designs to 500 mW
- Pulsed Designs to 10 W
- Frequency Coverage Specified from 5.9-95 GHz
- Low Phase Noise
- High Reliability