Microsemi MRF3866R1
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
| Part No. | MRF3866R1 |
|---|---|
| Datasheet | MRF3866R1 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Buy | Stock & Price |
FEATURES
● Low Cost SO-8 Plastic Surface Mount Package.●
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● S-Parameter Characterization Tape and Reel Packaging Options Available Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix–Tape and Reel, 500 units R2 suffix–Tape and Reel, 2500 units
DESCRIPTION
: Designed for general-purpose RF amplifier applications, such as; pre-drivers, Oscillators, etc.ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Value 30 55 3.5 400 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TC = 25ºC Derate above 25ºC 1.0 8 Watts mW/ ºC MSC1312.PDF 10-25-99 MRF3866, R1, R2ELECTRICAL SPECIFICATIONS
(Tcase = 25°C) STATIC (off) Symbol BVCER BVCBO BVEBO ICEO Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0, rbe = 10 Ohms) Collector-Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) 55 55 3.5 - Value Typ.
