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MS1076 - RF & MICROWAVE TRANSISTORS

General Description

The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications.

This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability.

Key Features

  • 30 MHz.
  • 28 VOLTS.
  • GOLD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS Features • 30 MHz • 28 VOLTS • GOLD METALLIZATION • POUT = 220 W PEP • GP = 12 dB GAIN MINIMUM • COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. MS1076 ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter VCBO VCEO VEBO IC PDISS TJ TSTG Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Junction - Case Thermal Resistance Rev A: October 2009 Value 70 35 4.0 16 250 +200 - 65 to +150 0.