Microsemi MS2211
The MS2211 is designed for specialized avionics applications, DataSheet4U.com including JTIDS, where power is provided under pulse formats utilizing short pulse widths and high burst or overall duty cycles.| Part No. | MS2211 |
|---|---|
| Datasheet | MS2211 Download |
| Manufacturer |  Microsemi |
| Description | RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| Buy | Stock & Price |
APPLICATIONS
FEATURES
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● REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 6.0 W MIN. WITH 9.3 dB Gain
DESCRIPTION
: DataSheeABSOLUTE MAXIMUM RATINGS
(Tcase = 25° C) Symbol PDISS IC VCC TJ TSTG Power Dissipation * (TC ≤ 75° C) Device Current * Collector - Supply Voltage * Junction Temperature (Pulsed RF Operation) Storage Temperature Parameter Value 25 0.9 32 250 - 65 to + 200 Unit W A V °C °C Thermal Data RTH(j-c) Junction-Case Thermal Resistance * 7.0 ° C/W * Applies only to rated RF amplifier operation DataSheet4U.com MSC0919.PDF 9-23-98 DataSheet 4 U .com MS2211 STATICELECTRICAL SPECIFICATIONS
(Tcase (Tcase = 25° C) Symbol BVCBO BVEBO BVCER Test Conditions Min. IC = 1 mA IE = 1 mA IC = 5 mA VBE = 0V VCE = 5V IE = 0 mA IC = 0 mA RBE =10Ω VCE = 28 V IC = 250 mA 48 3.5 48 ---30 Value Typ. ---------------- Max. ---------0.5 300 Unit V V V mA ---- ICES...
