MS2475
Features
- -
- -
- -
- DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.8 d B MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, MON BASE CONFIGURATION
DESCRIPTION
:
The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and broadband performance.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
VCC IC PDISS TJ
T STG
Parameter
Collector-Supply Voltage- Device Current- (TC ≤ 100° C) Power Dissipation- Junction Temperature Storage Temperature
Value
55 45 1670 +200
- 65 to + 200
Unit
V A W °C °C
Thermal Data
RTH(j-c) Junction-Case Thermal Resistance- 0.06 °C/W
- Applies only to rated RF operation.
MSC0937A.DOC 10-20-98
ELECTR...
