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MS2475 - RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

General Description

The MS2475 is a silicon NPN power transistor designed for IFF applications.

The MS2475 is designed to exceed the high peak power requirements of today's IFF systems.

Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and broadband performance.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS2475 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • DESIGNED FOR HIGH POWER PULSED IFF 720 WATTS (min.) IFF 1030 or 1090 MHz REFRACTORY GOLD METALLIZATION 6.8 dB MIN. GAIN LOW THERMAL RESISTANCE FOR RELIABILTY AND RUGGEDNESS 30:1 LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION DESCRIPTION: The MS2475 is a silicon NPN power transistor designed for IFF applications. The MS2475 is designed to exceed the high peak power requirements of today's IFF systems. Hermetic sealing, gold metalization and internal input matching provide superior long term reliability and broadband performance.